The influence of ammonia on the growth mode in InGaN/GaN heteroepitaxy by Oliver, R, Kappers, M, Humphreys, C, Briggs, G

Growth modes in heteroepitaxy of InGaN on GaN by Oliver, R, Kappers, M, Humphreys, C, Briggs, G

Optical cavity efficacy and lasing of focused ion beam milled GaN/InGaN micropillars by El-Ella, H, Collins, D, Kappers, M, Taylor, R, Oliver, R

Cavity-enhanced blue single-photon emission from a single InGaN/GaN quantum dot by Jarjour, A, Taylor, R, Oliver, R, Kappers, M, Humphreys, C, Tahraoui, A

Experimental and theoretical study of the quantum-confined Stark effect in a single InGaN/GaN quantum dot under applied vertical electric field by Jarjour, A, Oliver, R, Tahraoui, A, Kappers, M, Taylor, R, Humphreys, C

Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot by Jarjour, A, Oliver, R, Tahraoui, A, Kappers, M, Humphreys, C, Taylor, R

Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot. by Jarjour, A, Oliver, R, Tahraoui, A, Kappers, M, Humphreys, C, Taylor, R

Electrically driven single InGaN/GaN quantum dot emission by Jarjour, A, Taylor, R, Oliver, R, Kappers, M, Humphreys, C, Tahraoui, A

Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN by Yan, J, Kappers, M, Crossley, A, McAleese, C, Phillips, W, Humphreys, C

Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy by Zhu, T, Oehler, F, Reid, B, Emery, R, Taylor, R, Kappers, M, Oliver, R

Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN by Yan, J, Kappers, M, Crossley, A, McAleese, C, Phillips, W, Humphreys, C

Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN by Yan, J, Kappers, M, Crossley, A, McAleese, C, Phillips, W, Humphreys, C

Q-factor measurements on planar nitride cavities by Collins, D, Holmes, M, Taylor, R, Oliver, R, Kappers, M, Humphreys, C, Park, S

Growth and assessment of InGaN quantum dots in a microcavity: A blue single photon source by Oliver, R, Jarjour, A, Taylor, R, Tahraoui, A, Zhang, Y, Kappers, M, Humphreys, C

Atom probe tomography assessment of the impact of electron beam exposure on InxGa1-xN/GaN quantum wells by Bennett, SE, Saxey, D, Kappers, M, Barnard, J, Humphreys, C, Smith, G, Oliver, R

Growth and optical characterisation of multilayers of InGaN quantum dots by Zhu, T, El-Ella, H, Reid, B, Holmes, M, Taylor, R, Kappers, M, Oliver, R

Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogen anneal by Oliver, R, Kappers, M, Rice, J, Smith, J, Taylor, R, Humphreys, C, Briggs, G

Response to "Comment on 'Three-dimensional atom probe studies of an InxGa1-N-x/GaN multiple quantum well structure: assessment of possible indium clustering'" [Appl. Phys. Lett. 91... by Galtrey, M, Oliver, R, Kappers, M, Humphreys, C, Clifton, P, Cerezo, A, Smith, G

Three-dimensional atom probe studies of an InxGa1-xN/GaN multiple quantum well structure: Assessment of possible indium clustering by Galtrey, M, Oliver, R, Kappers, M, Humphreys, C, Stokes, D, Clifton, P, Cerezo, A

Cavity Enhancement of Single Quantum Dot Emission in the Blue by Taylor, R, Jarjour, A, Collins, D, Holmes, M, Oliver, R, Kappers, M, Humphreys, C