Showing 1 - 14 results of 14 for search 'Kemeng Yang', query time: 0.05s Refine Results
  1. 1
    Breakdown Characteristics of Ga<sub>2</sub>O<sub>3</sub>-on-SiC Metal-Oxide-Semiconductor Field-Effect Transistors

    Breakdown Characteristics of Ga<sub>2</sub>O<sub>3</sub>-on-SiC Metal-Oxide-Semiconductor Field-Effect Transistors by Maolin Zhang, Lei Wang, Kemeng Yang, Jiafei Yao, Weihua Tang, Yufeng Guo

    Published 2023-06-01
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  2. 2
    Equivalent model and limit for the SOI lateral power device using high-k dielectric

    Equivalent model and limit for the SOI lateral power device using high-k dielectric by Jiafei Yao, Yufeng Guo, Yu Deng, Kemeng Yang, Man Li, Tian Xia

    Published 2019-12-01
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  3. 3
    Snapback-Free Reverse-Conducting SOI LIGBT with an Integrated Self-Biased MOSFET

    Snapback-Free Reverse-Conducting SOI LIGBT with an Integrated Self-Biased MOSFET by Kemeng Yang, Jie Wei, Kaiwei Dai, Zhen Ma, Congcong Li, Xiaorong Luo

    Published 2022-04-01
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  4. 4
    Investigation on <i>β</i>-Ga<sub>2</sub>O<sub>3</sub>-Based Schottky Barrier Diode with Floating Metal Rings

    Investigation on <i>β</i>-Ga<sub>2</sub>O<sub>3</sub>-Based Schottky Barrier Diode with Floating Metal Rings by Suhao Yao, Kemeng Yang, Lili Yang, Ganrong Feng, Maolin Zhang, Yufeng Guo, Weihua Tang

    Published 2023-04-01
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  5. 5
    Area-Efficient and Snapback-Free SOI LIGBT With L-Shaped Extraction Path

    Area-Efficient and Snapback-Free SOI LIGBT With L-Shaped Extraction Path by Tao Tian, Yu-Feng Guo, Jia-Fei Yao, Jun Zhang, Kemeng Yang, Man Li

    Published 2019-01-01
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  6. 6
    An Analytical Breakdown Model for the SOI LDMOS With Arbitrary Drift Doping Profile by Using Effective Substrate Voltage Method

    An Analytical Breakdown Model for the SOI LDMOS With Arbitrary Drift Doping Profile by Using Effective Substrate Voltage Method by Kemeng Yang, Yufeng Guo, Jun Zhang, Jiafei Yao, Man Li, Ling Du, Xiaoming Huang

    Published 2020-01-01
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  7. 7
    Characterization and In Vitro Antioxidant and Anti-Inflammatory Activities of Ginsenosides Extracted from Forest-Grown Wild <i>Panax quinquefolius</i> L.

    Characterization and In Vitro Antioxidant and Anti-Inflammatory Activities of Ginsenosides Extracted from Forest-Grown Wild <i>Panax quinquefolius</i> L. by Yang Yang, Shan Xu, Kemeng Yang, Yuning Sun, Ruirui Yang, Yanan Hu, Guijie Chen, Huimei Cai

    Published 2023-11-01
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  8. 8
    High-Voltage Polarization-Superjunction GaN HEMT With Built-In SBD for Low Reverse Conduction Loss

    High-Voltage Polarization-Superjunction GaN HEMT With Built-In SBD for Low Reverse Conduction Loss by Tao Sun, Kemeng Yang, Jie Wei, Yanjiang Jia, Siyu Deng, Zhijia Zhao, Bo Zhang, Xiaorong Luo

    Published 2022-01-01
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  9. 9
    Vertical GaN Power MOSFET with Integrated Fin-Shaped Diode for Reverse Conduction

    Vertical GaN Power MOSFET with Integrated Fin-Shaped Diode for Reverse Conduction by Tao Sun, Xiaorong Luo, Jie Wei, Kemeng Yang, Siyu Deng, Zhijia Zhao, Yanjiang Jia, Bo Zhang

    Published 2022-08-01
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  10. 10
    High Performance Flip-Structure Enhancement-Mode HEMT with Face-to-Face Double Gates

    High Performance Flip-Structure Enhancement-Mode HEMT with Face-to-Face Double Gates by Siyu Deng, Jie Wei, Cheng Zhang, Dezun Liao, Tao Sun, Kemeng Yang, Lufan Xi, Bo Zhang, Xiaorong Luo

    Published 2022-08-01
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  11. 11
    Controllable growth α-In2Se3 flakes by chemical vapor deposition

    Controllable growth α-In2Se3 flakes by chemical vapor deposition by Kemeng Yang, Jiapeng Wang, Lin Wu, Yafei Yan, Xi Tang, Wei Gan, Liang Li, Yang Li, Hui Han, Hui Li

    Published 2023-08-01
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  12. 12
    SiC-on-insulator based lateral power device and it’ s analytical models

    SiC-on-insulator based lateral power device and it’ s analytical models by Jiafei Yao, Ang Li, Yuao Liu, Ziwei Hu, Man Li, Kemeng Yang, Jun Zhang, Jing Chen, Maolin Zhang, Yufeng Guo

    Published 2024-03-01
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  13. 13
    Investigations of 4H‐SiC trench MOSFET with integrated high‐K deep trench and gate dielectric

    Investigations of 4H‐SiC trench MOSFET with integrated high‐K deep trench and gate dielectric by Jiafei Yao, Yuao Liu, Ang Li, Xue Han, Qing Yao, Kemeng Yang, Man Li, Jing Chen, Maolin Zhang, Jun Zhang, Yufeng Guo

    Published 2024-05-01
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  14. 14
    A 121 A/cm<sup>2</sup> High Current Density Copolymer OSC-Based Thin-Film Power OFET With 300 V Off-State Breakdown Voltage

    A 121 A/cm<sup>2</sup> High Current Density Copolymer OSC-Based Thin-Film Power OFET With 300 V Off-State Breakdown Voltage by Fubin Wang, Jun Zhang, Hao Zhang, Lei Wang, Xin Wu, Haonan Lin, Jiayi Zhou, Yuhao Wang, Jiafei Yao, Jing Chen, Kemeng Yang, Man Li, Yufeng Guo

    Published 2023-01-01
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