Elaboration of near‐valence band defect states leading deterioration of ambipolar operation in SnO thin‐film transistors by Makoto Minohara, Shutaro Asanuma, Hidehiro Asai, Yuka Dobashi, Akane Samizo, Yasuhisa Tezuka, Kenichi Ozawa, Kazuhiko Mase, Izumi Hase, Naoto Kikuchi, Yoshihiro Aiura

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