Advanced Gate Technologies for State-of-the-art f[subscript T] in AlGaN/GaN HEMTs por Chung, Jinwook, Kim, Tae-Woo, Palacios, Tomas

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Injection velocity in thin-channel InAs HEMTs por Kim, Tae-Woo, del Alamo, Jesus A.

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30 nm In[subscript 0.7]Ga[subscript 0.3]As inverted-type HEMTs with reduced gate leakage current for logic applications por Kim, Tae-Woo, Kim, Dae-Hyun, del Alamo, Jesus A.

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Logic characteristics of 40 nm thin-channel InAs HEMTs por Kim, Tae-Woo, Kim, Dae-Hyun, del Alamo, Jesus A.

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60 nm self-aligned-gate InGaAs HEMTs with record high-frequency characteristics por Kim, Tae-Woo, Kim, Dae-Hyun, del Alamo, Jesus A.

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Quantum capacitance in scaled down III-V FETs por Jin, Donghyun, Kim, Dae-Hyun, Kim, Tae-Woo, del Alamo, Jesus A.

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III-V CMOS: What have we learned from HEMTs? por del Alamo, Jesus A., Kim, Dae-Hyun, Kim, Tae-Woo, Jin, Donghyun, Antoniadis, Dimitri A.

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