Observation of inter-Landau-level transitions in resonant tunneling between transverse X states in GaAs/AlAs double-barrier structures under hydrostatic pressure by Smith, J, Klipstein, P, Grey, R, Hill, G

Magnetotunneling spectroscopy with the field perpendicular to the tunneling direction of the transverse X electrons in GaAs/AlAs double-barrier structures under hydrostatic pressur... by Smith, J, Klipstein, P, Grey, R, Hill, G

Resonant tunneling between transverse X states in GaAs/AlAs double-barrier structures under elevated hydrostatic pressure by Smith, J, Klipstein, P, Grey, R, Hill, G

Observation of inter-Landau-level transitions in resonant tunneling between transverse X states in GaAs/AlAs double-barrier structures under hydrostatic pressure by Smith, J, Klipstein, P, Grey, R, Hill, G

Magnetotunneling spectroscopy with the field perpendicular to the tunneling direction of the transverse X electrons in GaAs/AlAs double-barrier structures under hydrostatic pressur... by Smith, J, Klipstein, P, Grey, R, Hill, G

Resonant tunneling between transverse X states in GaAs/AlAs double-barrier structures under elevated hydrostatic pressure by Smith, J, Klipstein, P, Grey, R, Hill, G

Photoluminescence of self-assembled InSb quantum dots grown on GaSb as a function of excitation power, temperature, and magnetic field by Alphandery, E, Nicholas, R, Mason, N, Lyapin, S, Klipstein, P

The role of interface quality in resonant tunneling between transverse X-states in GaAs/AlAs double barrier structures pressurised beyond the type II transition by Smith, J, Klipstein, P, Austing, D, Grey, R, Hill, G

GaAs high temperature optical constants and application to optical monitoring within the MOVPE environment by Allwood, D, Klipstein, P, Mason, N, Nicholas, R, Walker, P

THE ROLE OF INTERFACE QUALITY IN RESONANT-TUNNELING BETWEEN TRANSVERSE X-STATES IN GAAS/ALAS DOUBLE-BARRIER STRUCTURES PRESSURIZED BEYOND THE TYPE-II TRANSITION by Smith, J, Klipstein, P, Austing, D, Grey, R, Hill, G

Enhancement of 2D → 2D tunneling by Γ-XZ mixing in GaAs/AlAs resonant tunneling structures at high pressure by Im, H, Klipstein, P, Smith, J, Grey, R, Hill, G

Enhancement of 2D -> 2D tunneling by Gamma-X-Z mixing in GaAs/AlAs resonant tunneling structures at high pressure by Im, H, Klipstein, P, Smith, J, Grey, R, Hill, G

Vertical transport and electroluminescence in InAs/GaSb/InAs structures: GaSb thickness and hydrostatic pressure studies by Roberts, M, Chung, Y, Lyapin, S, Mason, N, Nicholas, R, Klipstein, P

Magnetic-field-induced suppression of tunnelling into a two-dimensional electron system by Reker, T, Chung, Y, Im, H, Klipstein, P, Nicholas, R, Shtrikman, H

Growth and application of group III - Antimonides by MOVPE by Klipstein, P, Lakrimi, M, Lyapin, S, Mason, N, Nicholas, R, Walker, P, IEEE

INTERFACE EFFECTS, BAND OVERLAP AND THE SEMIMETAL TO SEMICONDUCTOR TRANSITION IN INAS/GASB INTERBAND RESONANT-TUNNELING DIODES by Khancheema, U, Klipstein, P, Austing, D, Smith, J, Mason, N, Walker, P, Hill, G

Interface effects, band overlap and the semimetal to semiconductor transition in InAs/GaSb interband resonant tunnelling diodes by Khan-Cheema, U, Klipstein, P, Austing, D, Smith, J, Mason, N, Walker, P, Hill, G

GROWTH OF INAS/GASB STRAINED-LAYER SUPERLATTICES .1. by Booker, G, Klipstein, P, Lakrimi, M, Lyapin, S, Mason, N, Nicholas, R, Seong, T, Symons, D, Vaughan, T, Walker, P

GROWTH OF INAS/GASB STRAINED-LAYER SUPERLATTICES .2. by Booker, G, Klipstein, P, Lakrimi, M, Lyapin, S, Mason, N, Murgatroyd, I, Nicholas, R, Seong, T, Symons, D, Walker, P

Growth of InAs/GaSb strained layer superlattices by MOVPE .3. Use of UV absorption to monitor alkyl stability in the reactor by Booker, G, Daly, M, Klipstein, P, Lakrimi, M, Kuech, T, Li, J, Lyapin, S, Mason, N, Murgatroyd, I, Portal, J, Nicholas, R, Symons, D, Vicente, P, Walker, P