Showing 1 - 3 results of 3 for search 'Kringhoj, P', query time: 0.02s Refine Results
  1. 1
    {111} defects in 1-MeV-silicon-ion-implanted silicon.

    {111} defects in 1-MeV-silicon-ion-implanted silicon. by Chou, C, Cockayne, D, Zou, J, Kringhoj, P, Jagadish, C

    Published 1995
    Journal article
  2. 2
    {111} and {311} rod-like defects in silicon ion implanted silicon

    {111} and {311} rod-like defects in silicon ion implanted silicon by Chou, C, Cockayne, D, Zou, J, Kringhoj, P, Jagadish, C

    Published 1996
    Conference item
  3. 3
    The effect of ion-implantation induced defects on strain relaxation in GexSi1-x/Si heterostructures

    The effect of ion-implantation induced defects on strain relaxation in GexSi1-x/Si heterostructures by Glasko, J, Zou, J, Cockayne, D, Gerald, J, Kringhoj, P, Elliman, R

    Published 1997
    Conference item

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