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Poole–Frenkel (PF)-MOS: A Proposal for the Ultimate Scale of an MOS Transistor by Hei Wong, Kuniyuki Kakushima
Published 2023-01-01
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X-ray photoelectron spectroscopy study of high-k CeO2/La2O3 stacked dielectrics by Jieqiong Zhang, Hei Wong, Danqun Yu, Kuniyuki Kakushima, Hiroshi Iwai
Published 2014-11-01
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High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS<sub>2</sub> Film Using UHV RF Magnetron Sputtering and Sulfurization by Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
Published 2019-01-01
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Sheet Resistance Reduction of MoS₂ Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing by Takuya Hamada, Shigetaka Tomiya, Tetsuya Tatsumi, Masaya Hamada, Taiga Horiguchi, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
Published 2021-01-01
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Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide... by Takamasa Kawanago, Ryosuke Kajikawa, Kazuto Mizutani, Sung-Lin Tsai, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
Published 2023-01-01
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