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Lansheng Feng
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Lansheng Feng
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Lansheng Feng
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1
Parameter study of the high temperature MOCVD numerical model for AlN growth using orthogonal test design
by
Jiadai An
,
Xianying Dai
,
Lansheng Feng
,
Jieming Zheng
Published 2021-04-01
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Article
2
Ab initio study for molecular-scale adsorption, decomposition and desorption on AlN surfaces during MOCVD growth
by
Jiadai An
,
Xianying Dai
,
Runqiu Guo
,
Lansheng Feng
,
Tianlong Zhao
Published 2020-10-01
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Article
3
Gas-Phase Chemical Reaction Mechanism in the Growth of AlN during High-Temperature MOCVD: A Thermodynamic Study
by
Jiadai An
,
Xianying Dai
,
Qian Zhang
,
Runqiu Guo
,
Lansheng Feng
Published 2020-05-01
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Article
4
Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure
by
Ying Zhao
,
Shengrui Xu
,
Hongchang Tao
,
Yachao Zhang
,
Chunfu Zhang
,
Lansheng Feng
,
Ruoshi Peng
,
Xiaomeng Fan
,
Jinjuan Du
,
Jincheng Zhang
,
Yue Hao
Published 2020-12-01
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Article
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