Physical modeling of HZO-based ferroelectric field-effect transistors with a WOx channel by Xin Wen, Mattia Halter, Mattia Halter, Laura Bégon-Lours, Mathieu Luisier

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A multi-timescale synaptic weight based on ferroelectric hafnium zirconium oxide by Mattia Halter, Laura Bégon-Lours, Marilyne Sousa, Youri Popoff, Ute Drechsler, Valeria Bragaglia, Bert Jan Offrein

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Mixed volatility in a single device: memristive non-volatile and threshold switching in SmNiO3/BaTiO3 devices by Ruben Hamming-Green, Ruben Hamming-Green, Marcel Van den Broek, Laura Bégon-Lours, Beatriz Noheda, Beatriz Noheda

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Metastable ferroelectricity driven by depolarization fields in ultrathin Hf0.5Zr0.5O2 by Nikitas Siannas, Christina Zacharaki, Polychronis Tsipas, Stefanos Chaitoglou, Laura Bégon-Lours, Cosmin Istrate, Lucian Pintilie, Athanasios Dimoulas

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Back‐End‐of‐Line Integration of Synaptic Weights using HfO2/ZrO2 Nanolaminates by Laura Bégon‐Lours, Stefan Slesazeck, Donato Francesco Falcone, Viktor Havel, Ruben Hamming‐Green, Marina Martinez Fernandez, Elisabetta Morabito, Thomas Mikolajick, Bert Jan Offrein

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Roadmap on ferroelectric hafnia- and zirconia-based materials and devices by José P. B. Silva, Ruben Alcala, Uygar E. Avci, Nick Barrett, Laura Bégon-Lours, Mattias Borg, Seungyong Byun, Sou-Chi Chang, Sang-Wook Cheong, Duk-Hyun Choe, Jean Coignus, Veeresh Deshpande, Athanasios Dimoulas, Catherine Dubourdieu, Ignasi Fina, Hiroshi Funakubo, Laurent Grenouillet, Alexei Gruverman, Jinseong Heo, Michael Hoffmann, H. Alex Hsain, Fei-Ting Huang, Cheol Seong Hwang, Jorge Íñiguez, Jacob L. Jones, Ilya V. Karpov, Alfred Kersch, Taegyu Kwon, Suzanne Lancaster, Maximilian Lederer, Younghwan Lee, Patrick D. Lomenzo, Lane W. Martin, Simon Martin, Shinji Migita, Thomas Mikolajick, Beatriz Noheda, Min Hyuk Park, Karin M. Rabe, Sayeef Salahuddin, Florencio Sánchez, Konrad Seidel, Takao Shimizu, Takahisa Shiraishi, Stefan Slesazeck, Akira Toriumi, Hiroshi Uchida, Bertrand Vilquin, Xianghan Xu, Kun Hee Ye, Uwe Schroeder

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