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    Physical investigation of gate capacitance in In0.53Ga0.47As/In0.52Al0.48As quantum-well metal-oxide-semiconductor field-effect-transistors

    Physical investigation of gate capacitance in In0.53Ga0.47As/In0.52Al0.48As quantum-well metal-oxide-semiconductor field-effect-transistors by Hyeon-Bhin Jo, Jung-Ho Park, Seung-Woo Son, Ji-Min Baek, Do-Young Yun, Yeonsung Kang, Yong-Hyun Seo, Lee Min Yung, Jung-Hee Lee, Tae-Woo Kim, Dae-Hyun Kim

    Published 2018-07-01
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