Who will govern artificial intelligence? Learning from the history of strategic politics in emerging technologies by Leung, J

Signals from a self-antigen induce positive selection in early B cell ontogeny but are tolerogenic in adults. by Ferry, H, Crockford, T, Leung, J, Cornall, R

Ion-implantation-induced extended defect formation in (0001) and (11(2)over-bar0) 4H-SiC by Wong-Leung, J, Linnarsson, M, Svensson, BG, Cockayne, D

Long-Term Conditions in Older People are Linked with Loneliness, but a Sense of Coherence Buffers the Adverse Effects on Quality of Life: A Cross-Sectional Study by van Woerden HC, Angus N, Kiparoglou V, Atherton I, Leung J

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Phase perfection in zinc Blende and Wurtzite III-V nanowires using basic growth parameters. by Joyce, H, Wong-Leung, J, Gao, Q, Tan, H, Jagadish, C

Tailoring GaAs, InAs, and InGaAs nanowires for optoelectronic device applications by Joyce, H, Gao, Q, Wong-Leung, J, Kim, Y, Tan, H, Jagadish, C

Understanding the true shape of Au-catalyzed GaAs nanowires. by Jiang, N, Wong-Leung, J, Joyce, H, Gao, Q, Tan, H, Jagadish, C

B-cell tolerance. by Ferry, H, Leung, J, Lewis, G, Nijnik, A, Silver, K, Lambe, T, Cornall, R

High performance GaAs/AlGaAs radial heterostructure nanowires grown by MOCVD by Jiang, N, Gao, Q, Parkinson, P, Wong-Leung, J, Tan, H, Jagadish, C

Tailoring GaAs, InAs, and InGaAs Nanowires for Optoelectronic Device Applications by Joyce, H, Gao, Q, Wong-Leung, J, Kim, Y, Tan, H, Jagadish, C

High vertical yield InP nanowire growth on Si(111) using a thin buffer layer. by Fonseka, H, Tan, H, Wong-Leung, J, Kang, J, Parkinson, P, Jagadish, C

Growth and characterization of GaAs1and#x2212;xSbx nanowires by Yuan, X, Tan, H, Parkinson, P, Wong-Leung, J, Breuer, S, Gao, Q, Jagadish, C

Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1-xAs core-shell nanowires by Jiang, N, Parkinson, P, Gao, Q, Breuer, S, Tan, H, Wong-Leung, J, Jagadish, C

Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon by Wong-Leung, J, Fatima, S, Jagadish, C, Gerald, F, Chou, C, Zou, J, Cockayne, D

Improvement of minority carrier lifetime in GaAs/AlxGa 1-xAs core-shell nanowires by Jiang, N, Parkinson, P, Gao, Q, Wong-Leung, J, Breuer, S, Tan, H, Jagadish, C

InP nanowires grown by SA-MOVPE by Gao, Q, Tan, H, Fu, L, Parkinson, P, Breuer, S, Wong-Leung, J, Jagadish, C

Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors by Ullah, A, Burke, A, Micolich, A, Joyce, H, Wong-Leung, J, Tan, H, Jagadish, C

Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors by Ullah, A, Joyce, H, Burke, A, Wong-Leung, J, Tan, H, Jagadish, C, Micolich, A

Polarization tunable, multicolor emission from core-shell photonic III-V semiconductor nanowires. by Mokkapati, S, Saxena, D, Jiang, N, Parkinson, P, Wong-Leung, J, Gao, Q, Tan, H, Jagadish, C

Influence of growth temperature and V/III ratio on Au-assisted In xGa1-xAs nanowires by Ameruddin, A, Tan, H, Fonseka, H, Gao, Q, Wong-Leung, J, Parkinson, P, Breuer, S, Jagadish, C