Mostra 1 - 20 risultati di 43 ricerca 'Leung J', tempo di risposta: 0,04s
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Signals from a self-antigen induce positive selection in early B cell ontogeny but are tolerogenic in adults. di Ferry, H, Crockford, T, Leung, J, Cornall, R
Pubblicazione 2006Journal article -
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Ion-implantation-induced extended defect formation in (0001) and (11(2)over-bar0) 4H-SiC di Wong-Leung, J, Linnarsson, M, Svensson, BG, Cockayne, D
Pubblicazione 2005Journal article -
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Phase perfection in zinc Blende and Wurtzite III-V nanowires using basic growth parameters. di Joyce, H, Wong-Leung, J, Gao, Q, Tan, H, Jagadish, C
Pubblicazione 2010Journal article -
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Tailoring GaAs, InAs, and InGaAs nanowires for optoelectronic device applications di Joyce, H, Gao, Q, Wong-Leung, J, Kim, Y, Tan, H, Jagadish, C
Pubblicazione 2011Journal article -
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Understanding the true shape of Au-catalyzed GaAs nanowires. di Jiang, N, Wong-Leung, J, Joyce, H, Gao, Q, Tan, H, Jagadish, C
Pubblicazione 2014Journal article -
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B-cell tolerance. di Ferry, H, Leung, J, Lewis, G, Nijnik, A, Silver, K, Lambe, T, Cornall, R
Pubblicazione 2006Journal article -
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High performance GaAs/AlGaAs radial heterostructure nanowires grown by MOCVD di Jiang, N, Gao, Q, Parkinson, P, Wong-Leung, J, Tan, H, Jagadish, C
Pubblicazione 2013Journal article -
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Tailoring GaAs, InAs, and InGaAs Nanowires for Optoelectronic Device Applications di Joyce, H, Gao, Q, Wong-Leung, J, Kim, Y, Tan, H, Jagadish, C
Pubblicazione 2011Journal article -
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High vertical yield InP nanowire growth on Si(111) using a thin buffer layer. di Fonseka, H, Tan, H, Wong-Leung, J, Kang, J, Parkinson, P, Jagadish, C
Pubblicazione 2013Journal article -
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Growth and characterization of GaAs1and#x2212;xSbx nanowires di Yuan, X, Tan, H, Parkinson, P, Wong-Leung, J, Breuer, S, Gao, Q, Jagadish, C
Pubblicazione 2012Conference item -
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Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1-xAs core-shell nanowires di Jiang, N, Parkinson, P, Gao, Q, Breuer, S, Tan, H, Wong-Leung, J, Jagadish, C
Pubblicazione 2012Journal article -
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Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon di Wong-Leung, J, Fatima, S, Jagadish, C, Gerald, F, Chou, C, Zou, J, Cockayne, D
Pubblicazione 2000Journal article -
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Improvement of minority carrier lifetime in GaAs/AlxGa 1-xAs core-shell nanowires di Jiang, N, Parkinson, P, Gao, Q, Wong-Leung, J, Breuer, S, Tan, H, Jagadish, C
Pubblicazione 2012Conference item -
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InP nanowires grown by SA-MOVPE di Gao, Q, Tan, H, Fu, L, Parkinson, P, Breuer, S, Wong-Leung, J, Jagadish, C
Pubblicazione 2012Conference item -
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Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors di Ullah, A, Burke, A, Micolich, A, Joyce, H, Wong-Leung, J, Tan, H, Jagadish, C
Pubblicazione 2013Journal article -
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Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors di Ullah, A, Joyce, H, Burke, A, Wong-Leung, J, Tan, H, Jagadish, C, Micolich, A
Pubblicazione 2013Journal article -
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Polarization tunable, multicolor emission from core-shell photonic III-V semiconductor nanowires. di Mokkapati, S, Saxena, D, Jiang, N, Parkinson, P, Wong-Leung, J, Gao, Q, Tan, H, Jagadish, C
Pubblicazione 2012Journal article -
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Influence of growth temperature and V/III ratio on Au-assisted In xGa1-xAs nanowires di Ameruddin, A, Tan, H, Fonseka, H, Gao, Q, Wong-Leung, J, Parkinson, P, Breuer, S, Jagadish, C
Pubblicazione 2012Conference item -
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