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1

An investigation of ZnSe growth by chemical beam epitaxy using modulated beam scattering and related techniques by Foord, J, Levoguer, C, Davies, G

Published 1996

Conference item
2

REACTION MODELS FOR THE EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY by Foord, J, French, C, Levoguer, C, Davies, G

Published 1993

Journal article
3

MODULATED MOLECULAR-BEAM MASS-SPECTROMETRY STUDIES OF THE GROWTH OF GAAS AND INXGA1-XAS USING TRI-ISOBUTYLGALLIUM by Levoguer, C, Foord, J, Davies, G, Skevington, P

Published 1994

Conference item
4

REACTION-MECHANISMS GOVERNING THE SELECTED-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY by Foord, J, French, C, Levoguer, C, Davies, G, Skevington, P

Published 1993

Journal article
5

SURFACE-REACTION MECHANISMS GOVERNING THE SELECTIVE AREA GROWTH OF III-V COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY by Davies, G, Skevington, P, Levoguer, C, French, C, Foord, J

Published 1993

Conference item
6

SELECTIVE-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY - STUDY OF REACTION-MECHANISMS by Davies, G, Skevington, P, Foord, J, French, C, Levoguer, C

Published 1994

Conference item
7

SOME COMPARISONS OF CHEMICAL BEAM EPITAXY INGAAS/INP GROWTH USING TRIETHYLGALLIUM, TRIISOPROPYLGALLIUM AND TRIISOBUTYLGALLIUM SOURCES by Davies, G, Skevington, P, Morris, J, Jones, A, Rushworth, S, Foord, J, Levoguer, C

Published 1994

Conference item