Vivian Lin

Lin in 2014 Vivian Kwang-wen Lin is Honorary Professor in the Li Ka Shing Faculty of Medicine at the University of Hong Kong. She was the Executive Associate Dean of the same faculty from 2019 until 2024. Provided by Wikipedia
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  1. 1
    Quantification of Aggregate Formation in Prochlorococcus

    Quantification of Aggregate Formation in Prochlorococcus by Hou, Lin (Vivian)

    Published 2022
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    Thesis
  2. 2
    Coordination and sharing at the interfaces

    Coordination and sharing at the interfaces by Lin, Vivian I-Wen, 1972-

    Published 2009
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    Thesis
  3. 3
    Clinical epidemiology (CE) and evidence-based medicine (EBM) in the Asia pacific region (Round Table Forum)

    Clinical epidemiology (CE) and evidence-based medicine (EBM) in the Asia pacific region (Round Table Forum) by Tin, Tin Su, Bulgiba, Awang, Sampatanukul, Pichet, Sastroasmoro, Sudigdo, Chang, Peter, Tharyan, Prathap, Lin, Vivian, Wong, Yut Lin

    Published 2013
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    Article
  4. 4
    Improved OFF-state breakdown voltage in AlGaN/GaN HEMTs grown on 150-mm diameter silicon-on-insulator (SOI) substrate

    Improved OFF-state breakdown voltage in AlGaN/GaN HEMTs grown on 150-mm diameter silicon-on-insulator (SOI) substrate by Dolmanan, S. B., Teo, S. L., Arulkumaran, Subramaniam, Lin, Vivian Kaixin, Ng, Geok Ing, Vicknesh, Sahmuganathan, Tan, Joyce Pei Ying, Kumar, M. Krishna, Tripathy, Sudhiranjan

    Published 2013
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    Conference Paper
  5. 5
    Effect of Ge diffusion on AlxGa1-xN/GaN high electron mobility transistors on a thin silicon-on-insulator

    Effect of Ge diffusion on AlxGa1-xN/GaN high electron mobility transistors on a thin silicon-on-insulator by Bera, L. K., Tham, W. H., Kajen, R. S., Dolmanan, S. B., Kumar, M. Krishna, Lin, Vivian Kaixin, Ang, Diing Shenp, Bhat, T. N., Yakovlev, N., Tripathy, Sudhiranjan

    Published 2014
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    Journal Article
  6. 6
    Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrate

    Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrate by Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan, Wang, Hong, Ang, Kian Siong, Tan, Joyce Pei Ying, Lin, Vivian Kaixin, Todd, Shane, Lo, Guo-Qiang, Tripathy, Sudhiranjan

    Published 2013
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    Journal Article
  7. 7
    AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

    AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111) by Dolmanan, S. B., Kajen, R. S., Bera, L. K., Teo, S. L., Wang, W. Z., Li, H., Lee, D., Han, S., Tripathy, Sudhiranjan, Lin, Vivian Kaixin, Tan, Joyce Pei Ying, Kumar, M. Krishna, Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan, Todd, Shane, Lo, Guo-Qiang

    Published 2013
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    Journal Article

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