Origin of the two-dimensional hole gas and criteria for its existence in the III-nitride heterostructures by Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K.

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In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobi... by Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Agrawal, Manvi

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Effects of Si doping well beyond the Mott transition limit in GaN epilayers grown by plasma-assisted molecular beam epitaxy by Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Zheng, Y.

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Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures—experimental evidence of the hole trap sta... by Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Huo, Lili

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Growth instability of N-polar GaN on vicinal SiC substrate using plasma-assisted molecular beam epitaxy by Huo, Lili, Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K.

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Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures by Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Ranjan, A., Seah, Alex Tian Long, Huo, Lili

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Non-linear thermal resistance model for the simulation of high power GaN-based devices by Garciá-Sánchez, S., Iñiguez-de-la-Torre, I., Pérez, S., Ranjan, Kumud, Agrawal, Manvi, Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Arulkumaran, Subramaniam, Ng, Geok Ing, González, T., Mateos, J.

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On the practical limitations for the generation of Gunn oscillations in highly doped GaN diodes by Garcia-Sanchez, S., Daher, M. Abou, Lesecq, M., Huo, Lili, Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Iniguez-De-La-Torre, I., Vasallo, B. G., Perez, S., Gonzalez, T., Mateos, J.

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