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    First Demonstration of L-Band High-Power Limiter with GaN Schottky Barrier Diodes (SBDs) Based on Steep-Mesa Technology

    First Demonstration of L-Band High-Power Limiter with GaN Schottky Barrier Diodes (SBDs) Based on Steep-Mesa Technology by Yue Sun, Xuanwu Kang, Shixiong Deng, Yingkui Zheng, Ke Wei, Linwang Xu, Hao Wu, Xinyu Liu

    Published 2021-02-01
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