A self-rectifying unipolar HfOx based RRAM using doped germanium bottom electrode by Liu, W. J., Tran, Xuan Anh, Sun, Xiaowei, Yu, Hongyu

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Characteristics of a single-layer graphene field effect transistor with UV/ozone treatment by Tran, Xuan Anh, Yu, Hongyu, Sun, Xiaowei, Liu, W. J., Liu, X. B., Wei, J.

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A self-rectifying A1Oy bipolar RRAM with sub-50μA set/reset current for cross-bar architecture by Liu, W. J., Yeo, Y. C., Nguyen, B. Y., Tran, Xuan Anh, Zhu, Wei, Yu, Hongyu

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Mechanism of different switching directions in graphene oxide based RRAM by Wang, Zhongrui, Tjoa, Verawati, Wu, L., Liu, W. J., Fang, Z., Tran, Xuan Anh, Wei, J., Zhu, W. G., Yu, Hongyu

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Highly uniform, self-compliance, and forming-free ALD HfO2-based RRAM with Ge doping by Wu, L., Wang, Zhongrui, Zhu, W. G., Du, A. Y., Fang, Z., Tran, Xuan Anh, Liu, W. J., Zhang, K. L., Yu, Hongyu

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Vth shift in single-layer graphene field-effect transistors and its correlation with Raman inspection by Wei, J., Liu, W. J., Fang, Z., Wang, Z. R., Wang, F., Wu, L., Zhang, J. F., Zhu, H. L., Sun, Xiaowei, Tran, Xuan Anh, Yu, Hongyu

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A self-rectifying HfOx-based unipolar RRAM with NiSi electrode by Tran, Xuan Anh, Gao, Bin, Yu, Hongyu, Zhu, W. G., Kang, J. F., Liu, W. J., Fang, Z., Wang, Z. R., Yeo, Y. C., Nguyen, B. Y., Li, M. F.

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Positive bias-induced Vth instability in graphene field effect transistors by Liu, W. J., Fang, Z., Wang, Z. R., Wang, F., Wu, L., Zhang, J. F., Wei, J., Zhu, H. L., Sun, Xiaowei, Tran, Xuan Anh, Ng, Geok Ing, Yu, Hongyu

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A systematic review and meta-analysis on prevalence of and risk factors associated with depression, anxiety and insomnia in infectious diseases, including COVID-19: a call to actio... by Yuan, K, Zheng, Y-B, Wang, Y-J, Sun, Y-K, Gong, Y-M, Huang, Y-T, Chen, X, Liu, X-X, Zhong, Y, Su, S-Z, Gao, N, Lu, Y-L, Wang, Z, Liu, W-J, Que, J-Y, Yang, Y-B, Zhang, A-Y, Jing, M-N, Yuan, C-W, Zeng, N, Vitiello, MV, Patel, V, Fazel, S, Minas, H, Thornicroft, G, Fan, T-T, Lin, X, Yan, W, Shi, L, Shi, J, Kosten, T, Bao, Y-P, Lu, L