A self-rectifying unipolar HfOx based RRAM using doped germanium bottom electrode av Liu, W. J., Tran, Xuan Anh, Sun, Xiaowei, Yu, Hongyu

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Crystal structure of bis[N-(2-aminopropyl)-salicylaldiminato)]cobalt(III) perchlorate, C20H26ClCoN4O6 av Zhu H.-L., Liu W.-.J., Wang Y.-F., Wang D.-Q.

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Crystal structure of bis[N^-(2-aminopropyl)-salicylaldiminato)]cobalt(III) Perchlorate,C20H26CLCoN4O6 av Zhu Η.-L., Liu W.-.J., Wang Y.-F., Wang D.-Q.

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Refinement of the crystal structure of (E)-1,3-diphenyl-2-propen-1-one, C15H12O av Wu M.-H., Yang X.-H., Zou W.-D., Liu W.-J., Li C.

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Refinement of the crystal structure of (E)-1,3-diphenyl-2-propen-1-one, C15H12O av Wu M.-H., Yang X.-H., Zou W.-D., Liu W.-J., Li C.

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Characteristics of a single-layer graphene field effect transistor with UV/ozone treatment av Tran, Xuan Anh, Yu, Hongyu, Sun, Xiaowei, Liu, W. J., Liu, X. B., Wei, J.

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A self-rectifying A1Oy bipolar RRAM with sub-50μA set/reset current for cross-bar architecture av Liu, W. J., Yeo, Y. C., Nguyen, B. Y., Tran, Xuan Anh, Zhu, Wei, Yu, Hongyu

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Crystal structure of dinitrato-dimethanol-bis[N-(2-aminopropyl)-salicylaldiminato]dicadmium(II),Cd2(C10H13N2O)2(NO3)2(CH3OH)2 av Xia D.-S., Wang Y.-F., Liu W.-J., Zeng Q.-F., Wang D.-Q., Zhu H.-L.

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Mechanism of different switching directions in graphene oxide based RRAM av Wang, Zhongrui, Tjoa, Verawati, Wu, L., Liu, W. J., Fang, Z., Tran, Xuan Anh, Wei, J., Zhu, W. G., Yu, Hongyu

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Highly uniform, self-compliance, and forming-free ALD HfO2-based RRAM with Ge doping av Wu, L., Wang, Zhongrui, Zhu, W. G., Du, A. Y., Fang, Z., Tran, Xuan Anh, Liu, W. J., Zhang, K. L., Yu, Hongyu

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Vth shift in single-layer graphene field-effect transistors and its correlation with Raman inspection av Wei, J., Liu, W. J., Fang, Z., Wang, Z. R., Wang, F., Wu, L., Zhang, J. F., Zhu, H. L., Sun, Xiaowei, Tran, Xuan Anh, Yu, Hongyu

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A self-rectifying HfOx-based unipolar RRAM with NiSi electrode av Tran, Xuan Anh, Gao, Bin, Yu, Hongyu, Zhu, W. G., Kang, J. F., Liu, W. J., Fang, Z., Wang, Z. R., Yeo, Y. C., Nguyen, B. Y., Li, M. F.

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Positive bias-induced Vth instability in graphene field effect transistors av Liu, W. J., Fang, Z., Wang, Z. R., Wang, F., Wu, L., Zhang, J. F., Wei, J., Zhu, H. L., Sun, Xiaowei, Tran, Xuan Anh, Ng, Geok Ing, Yu, Hongyu

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A systematic review and meta-analysis on prevalence of and risk factors associated with depression, anxiety and insomnia in infectious diseases, including COVID-19: a call to actio... av Yuan, K, Zheng, Y-B, Wang, Y-J, Sun, Y-K, Gong, Y-M, Huang, Y-T, Chen, X, Liu, X-X, Zhong, Y, Su, S-Z, Gao, N, Lu, Y-L, Wang, Z, Liu, W-J, Que, J-Y, Yang, Y-B, Zhang, A-Y, Jing, M-N, Yuan, C-W, Zeng, N, Vitiello, MV, Patel, V, Fazel, S, Minas, H, Thornicroft, G, Fan, T-T, Lin, X, Yan, W, Shi, L, Shi, J, Kosten, T, Bao, Y-P, Lu, L