Control of the metal-to-insulator transition by substrate orientation in nickelates by Peng, Jingjing, Ouyang, Bin, Liu, H. Y., Hao, Changshan, Tang, S. S., Gu, Y. D., Yan, Y.

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Optical characteristics of 1.55 μm GaInNAs multi-quantum wells by Sun, Handong, Calvez, Stephane, Dawson, M. D., Qiu, Y. N., Rorison, J. M., Clark, Antony H., Liu, H. Y., Hopkinson, M.

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p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency by Liu, H. Y., Liew, S. L., Badcock, T., Mowbray, D. J., Skolnick, M. S., Ray, S. K., Choi, T. L., Groom, K. M., Stevens, B., Hasbullah, Nurul Fadzlin, Jin, C. Y., Hopkinson, M., Hogg, R. A.

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