Crystal structure of bis[N-(2-(2-hydroxyethylamino)ethyl)salicylideneimine]- cobalt(III) nitrate, C22H30CoN5O7 by Zhu H.-L., Liu X.-Y., Wang Y.-F., Wang D.-Q.

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Crystal structure of bis[N-(2-(2-hydroxyethylamino)ethyl)salicylideneimine]- cobalt(III) nitrate, C22H30CoN5O7 by Zhu H.-L., Liu X.-Y., Wang Y.-F., Wang D.-Q.

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Mechanism for recombination of radiation-induced point defects at interphase boundaries by Demkowicz, Michael J., Germann, T. C., Liu, X.-Y., Misra, Amit, Nastasi, M., Uberuaga, B. P.

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Oxide-based RRAM : a novel defect-engineering-based implementation for multilevel data storage by Gao, Bin, Yu, Hongyu, Kang, J. F., Chen, B., Liu, L. F., Liu, X. Y., Wang, Z. R., Yu, B.

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Improvement and evaluation of polymer-matrix composite panels with hat stiffeners by Li S. J., Zhan L. H., Ding X. X., Chen F., Peng W. F., Zhang Y. A., Pu Y. W., Liu X. Y.

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Improvement of endurance degradation for oxide based resistive switching memory devices correlated with oxygen vacancy accumulation effect by Gao, Bin, Yu, Hongyu, Lu, Y., Chen, B., Fang, Z., Fu, Y. H., Yang, J. Q., Liu, L. F., Liu, X. Y., Kang, J. F.

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Microscopic mechanism for unipolar resistive switching behaviour of nickel oxides by Chen, Y. S., Kang, J. F., Chen, B., Liu, L. F., Liu, X. Y., Wang, Y. Y., Wu, L., Wang, J. Y., Chen, Q., Wang, E. G., Gao, Bin, Yu, Hongyu

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