Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT) by Chen Z.X., Li X., Li W.-M., Lo G.-Q.

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Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device by Ang, Diing Shenp, Zhang, H. Z., Gu, C. J., Yew, K. S., Wang, X. P., Lo, G. Q.

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Experimental demonstration of optical switch using gradient optical force by Ding, L., Song, J. F., Yu, M. B., Lo, G. Q., Kwong, D. L., Cai, H., Tao, J. F.

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Effect of nickel silicide induced dopant segregation on vertical silicon nanowire diode performance by Tan, Chuan Seng, Lu, W., Pey, K. L., Singh, N., Leong, K. C., Liu, Q., Gan, C. L., Lo, G. Q., Kwong, D. -L.

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Chip-based measurement-device-independent quantum key distribution using integrated silicon photonic systems by Cao, Lin, Luo, W., Wang, Yunxiang, Zou, J., Yan, R. D., Cai, H., Zhang, Yichen, Hu, X. L., Jiang, C., Fan, W. J., Zhou, X. Q., Dong, B., Luo, X. S., Lo, G. Q., Wang, Y. X., Xu, Z. W., Sun, S. H., Wang, X. B., Hao, Y. L., Jin, Y. F., Kwong, D. L., Kwek, Leongchuan, Liu, Aiqun

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