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    Measurement of Residual Stress and Young’s Modulus on Micromachined Monocrystalline 3C-SiC Layers Grown on <111> and <100> Silicon

    Measurement of Residual Stress and Young’s Modulus on Micromachined Monocrystalline 3C-SiC Layers Grown on <111> and <100> Silicon by Sergio Sapienza, Matteo Ferri, Luca Belsito, Diego Marini, Marcin Zielinski, Francesco La Via, Alberto Roncaglia

    Published 2021-09-01
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