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    The influence of the substrate temperature change character during the growth on the topology of the Ge/Si(100) film surface

    The influence of the substrate temperature change character during the growth on the topology of the Ge/Si(100) film surface di L S Lunin, M D Bavizhev, I A Sysoev, V A Lapin, D S Kuleshov, F F Malyavin

    Pubblicazione 2012-09-01
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