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    Enhanced Field Effect Mobility on 4H-SiC by Oxidation at 1500°C

    Enhanced Field Effect Mobility on 4H-SiC by Oxidation at 1500°C by S. M. Thomas, Y. K. Sharma, M. A. Crouch, C. A. Fisher, A. Perez-Tomas, M. R. Jennings, P. A. Mawby

    Published 2014-01-01
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