Revealing Low Thermal Conductivity of Germanium Tin Semiconductor at Room Temperature by Sabur Ayinde, Maksym Myronov

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Electric field-tuneable crossing of hole Zeeman splitting and orbital gaps in compressively strained germanium semiconductor on silicon by Maksym Myronov, Philip Waldron, Pedro Barrios, Alex Bogan, Sergei Studenikin

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Strain mapping of silicon carbon suspended membranes by Gerard Colston, Oliver Newell, Stephen D. Rhead, Vishal A. Shah, Maksym Myronov

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Holes Outperform Electrons in Group IV Semiconductor Materials by Maksym Myronov, Jan Kycia, Philip Waldron, Weihong Jiang, Pedro Barrios, Alex Bogan, Peter Coleridge, Sergei Studenikin

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Uprooting defects to enable high-performance III–V optoelectronic devices on silicon by Youcef A. Bioud, Abderraouf Boucherif, Maksym Myronov, Ali Soltani, Gilles Patriarche, Nadi Braidy, Mourad Jellite, Dominique Drouin, Richard Arès

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Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures by Vishal Ajit Shah, Maksym Myronov, Chalermwat Wongwanitwatana, Lewis Bawden, Martin J Prest, James S Richardson-Bullock, Stephen Rhead, Evan H C Parker, Terrance E Whall and David R Leadley

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