Showing 1 - 6 results of 6 for search 'Maolin Pan', query time: 0.03s Refine Results
  1. 1
    Spectral Methods in Spatial Statistics

    Spectral Methods in Spatial Statistics by Kun Chen, Lianmin Zhang, Maolin Pan

    Published 2014-01-01
    Get full text
    Article
  2. 2
    O<sub>2</sub> Plasma Alternately Treated ALD-Al<sub>2</sub>O<sub>3</sub> as Gate Dielectric for High Performance AlGaN/GaN MIS-HEMTs

    O<sub>2</sub> Plasma Alternately Treated ALD-Al<sub>2</sub>O<sub>3</sub> as Gate Dielectric for High Performance AlGaN/GaN MIS-HEMTs by Qiang Wang, Maolin Pan, Penghao Zhang, Luyu Wang, Yannan Yang, Xinling Xie, Hai Huang, Xin Hu, Min Xu

    Published 2024-01-01
    Get full text
    Article
  3. 3
    Improved <i>V</i><sub>th</sub> Stability and Gate Reliability of GaN-Based MIS-HEMTs by Employing Alternating O<sub>2</sub> Plasma Treatment

    Improved <i>V</i><sub>th</sub> Stability and Gate Reliability of GaN-Based MIS-HEMTs by Employing Alternating O<sub>2</sub> Plasma Treatment by Xinling Xie, Qiang Wang, Maolin Pan, Penghao Zhang, Luyu Wang, Yannan Yang, Hai Huang, Xin Hu, Min Xu

    Published 2024-03-01
    Get full text
    Article
  4. 4
    High Selectivity, Low Damage ICP Etching of <em>p</em>-GaN over AlGaN for Normally-off <em>p</em>-GaN HEMTs Application

    High Selectivity, Low Damage ICP Etching of <em>p</em>-GaN over AlGaN for Normally-off <em>p</em>-GaN HEMTs Application by Penghao Zhang, Luyu Wang, Kaiyue Zhu, Yannan Yang, Rong Fan, Maolin Pan, Saisheng Xu, Min Xu, Chen Wang, Chunlei Wu, David Wei Zhang

    Published 2022-04-01
    Get full text
    Article
  5. 5
    In Situ H-Radical Surface Treatment on Aluminum Gallium Nitride for High-Performance Aluminum Gallium Nitride/Gallium Nitride MIS-HEMTs Fabrication

    In Situ H-Radical Surface Treatment on Aluminum Gallium Nitride for High-Performance Aluminum Gallium Nitride/Gallium Nitride MIS-HEMTs Fabrication by Yannan Yang, Rong Fan, Penghao Zhang, Luyu Wang, Maolin Pan, Qiang Wang, Xinling Xie, Saisheng Xu, Chen Wang, Chunlei Wu, Min Xu, Jian Jin, David Wei Zhang

    Published 2023-06-01
    Get full text
    Article
  6. 6
    A Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance <i>p</i>-GaN Gate HEMTs Fabrication

    A Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance <i>p</i>-GaN Gate HEMTs Fabrication by Luyu Wang, Penghao Zhang, Kaiyue Zhu, Qiang Wang, Maolin Pan, Xin Sun, Ziqiang Huang, Kun Chen, Yannan Yang, Xinling Xie, Hai Huang, Xin Hu, Saisheng Xu, Chunlei Wu, Chen Wang, Min Xu, David Wei Zhang

    Published 2023-08-01
    Get full text
    Article

Search Tools: