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    Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors

    Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors by Pedro Fernandes Paes Pinto Rocha, Mohammed Zeghouane, Sarah Boubenia, Franck Bassani, Laura Vauche, Eugénie Martinez, William Vandendaele, Marc Veillerot, Bassem Salem

    Published 2024-03-01
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