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  1. 1
    Investigation of Al- and N-implanted 4H–SiC applying visible and deep UV Raman scattering spectroscopy

    Investigation of Al- and N-implanted 4H–SiC applying visible and deep UV Raman scattering spectroscopy by Krzysztof Piskorski, Marek Guziewicz, Marek Wzorek, Lech Dobrzański

    Published 2020-05-01
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  2. 2
    Carrier Trap Density Reduction at SiO<sub>2</sub>/4H-Silicon Carbide Interface with Annealing Processes in Phosphoryl Chloride and Nitride Oxide Atmospheres

    Carrier Trap Density Reduction at SiO<sub>2</sub>/4H-Silicon Carbide Interface with Annealing Processes in Phosphoryl Chloride and Nitride Oxide Atmospheres by Ernest Brzozowski, Maciej Kaminski, Andrzej Taube, Oskar Sadowski, Krystian Krol, Marek Guziewicz

    Published 2023-06-01
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