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    The role of annealing ambient on diffusion of implanted Si in β-Ga2O3

    The role of annealing ambient on diffusion of implanted Si in β-Ga2O3 by Ribhu Sharma, Mark E. Law, Chaker Fares, Marko Tadjer, Fan Ren, A. Kuramata, S. J. Pearton

    Published 2019-08-01
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