Experimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs by Susanna Yu, Marvin H. White, Anant K. Agarwal

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A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching by Shengnan Zhu, Tianshi Liu, Junchong Fan, Arash Salemi, Marvin H. White, David Sheridan, Anant K. Agarwal

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Effects of JFET Region Design and Gate Oxide Thickness on the Static and Dynamic Performance of 650 V SiC Planar Power MOSFETs by Shengnan Zhu, Tianshi Liu, Junchong Fan, Hema Lata Rao Maddi, Marvin H. White, Anant K. Agarwal

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An Investigation of Body Diode Reliability in Commercial 1.2 kV SiC Power MOSFETs with Planar and Trench Structures by Jiashu Qian, Limeng Shi, Michael Jin, Monikuntala Bhattacharya, Atsushi Shimbori, Hengyu Yu, Shiva Houshmand, Marvin H. White, Anant K. Agarwal

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Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs by Jiashu Qian, Limeng Shi, Michael Jin, Monikuntala Bhattacharya, Atsushi Shimbori, Hengyu Yu, Shiva Houshmand, Marvin H. White, Anant K. Agarwal

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The Road to a Robust and Affordable SiC Power MOSFET Technology by Hema Lata Rao Maddi, Susanna Yu, Shengnan Zhu, Tianshi Liu, Limeng Shi, Minseok Kang, Diang Xing, Suvendu Nayak, Marvin H. White, Anant K. Agarwal

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SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology by Tianshi Liu, Hua Zhang, Sundar Babu Isukapati, Emran Ashik, Adam J. Morgan, Bongmook Lee, Woongje Sung, Ayman Fayed, Marvin H. White, Anant K. Agarwal

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