Showing 1 - 14 results of 14 for search 'Masaharu Kobayashi', query time: 0.88s Refine Results
  1. 1
    On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2V supply voltage with ferroelectric HfO2 thin film

    On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2V supply voltage with ferroelectric HfO2 thin film by Masaharu Kobayashi, Toshiro Hiramoto

    Published 2016-02-01
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  2. 2
    A Feasibility Study on Ferroelectric Shadow SRAMs Based on Variability-Aware Design Optimization

    A Feasibility Study on Ferroelectric Shadow SRAMs Based on Variability-Aware Design Optimization by Kiyoshi Takeuchi, Masaharu Kobayashi, Toshiro Hiramoto

    Published 2019-01-01
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  3. 3
    On the Physical Mechanism of Transient Negative Capacitance Effect in Deep Subthreshold Region

    On the Physical Mechanism of Transient Negative Capacitance Effect in Deep Subthreshold Region by Chengji Jin, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi

    Published 2019-01-01
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  4. 4
    Experimental Observation and Simulation Model for Transient Characteristics of Negative-Capacitance in Ferroelectric HfZrO<sub>2</sub> Capacitor

    Experimental Observation and Simulation Model for Transient Characteristics of Negative-Capacitance in Ferroelectric HfZrO<sub>2</sub> Capacitor by Kyungmin Jang, Nozomu Ueyama, Masaharu Kobayashi, Toshiro Hiramoto

    Published 2018-01-01
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  5. 5
    Experimental Demonstration of a Nonvolatile SRAM With Ferroelectric HfO<sub>2</sub> Capacitor for Normally Off Application

    Experimental Demonstration of a Nonvolatile SRAM With Ferroelectric HfO<sub>2</sub> Capacitor for Normally Off Application by Masaharu Kobayashi, Nozomu Ueyama, Kyungmin Jang, Toshiro Hiramoto

    Published 2018-01-01
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  6. 6
    Ferroelectric HfO<sub>2</sub> Tunnel Junction Memory With High TER and Multi-Level Operation Featuring Metal Replacement Process

    Ferroelectric HfO<sub>2</sub> Tunnel Junction Memory With High TER and Multi-Level Operation Featuring Metal Replacement Process by Masaharu Kobayashi, Yusaku Tagawa, Fei Mo, Takuya Saraya, Toshiro Hiramoto

    Published 2019-01-01
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  7. 7
    Mesoscopic-scale grain formation in HfO2-based ferroelectric thin films and its impact on electrical characteristics

    Mesoscopic-scale grain formation in HfO2-based ferroelectric thin films and its impact on electrical characteristics by Masaharu Kobayashi, Jixuan Wu, Yoshiki Sawabe, Saraya Takuya, Toshiro Hiramoto

    Published 2022-11-01
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  8. 8
    Ultrathin MoS&#x2082;-Channel FeFET Memory With Enhanced Ferroelectricity in HfZrO&#x2082; and Body-Potential Control

    Ultrathin MoS&#x2082;-Channel FeFET Memory With Enhanced Ferroelectricity in HfZrO&#x2082; and Body-Potential Control by Jiawen Xiang, Wen Hsin Chang, Takuya Saraya, Toshiro Hiramoto, Toshifumi Irisawa, Masaharu Kobayashi

    Published 2022-01-01
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  9. 9
    Subthreshold Swing in Silicon Gate-All-Around Nanowire and Fully Depleted SOI MOSFETs at Cryogenic Temperature

    Subthreshold Swing in Silicon Gate-All-Around Nanowire and Fully Depleted SOI MOSFETs at Cryogenic Temperature by Shohei Sekiguchi, Min-Ju Ahn, Tomoko Mizutani, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto

    Published 2021-01-01
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  10. 10
    Energy-Efficient Annealing Process of Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Capacitor Using Ultraviolet-LED for Green Manufacturing

    Energy-Efficient Annealing Process of Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Capacitor Using Ultraviolet-LED for Green Manufacturing by Hirotaka Yamada, Satoru Furue, Takehiko Yokomori, Yuki Itoya, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi

    Published 2024-01-01
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  11. 11
    Low-Voltage Operating Ferroelectric FET with Ultrathin IGZO Channel for High-Density Memory Application

    Low-Voltage Operating Ferroelectric FET with Ultrathin IGZO Channel for High-Density Memory Application by Fei Mo, Yusaku Tagawa, Chengji Jin, MinJu Ahn, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi

    Published 2020-01-01
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  12. 12
    Efficient Erase Operation by GIDL Current for 3D Structure FeFETs With Gate Stack Engineering and Compact Long-Term Retention Model

    Efficient Erase Operation by GIDL Current for 3D Structure FeFETs With Gate Stack Engineering and Compact Long-Term Retention Model by Fei Mo, Jiawen Xiang, Xiaoran Mei, Yoshiki Sawabe, Takuya Saraya, Toshiro Hiramoto, Chun-Jung Su, Vita Pi-Ho Hu, Masaharu Kobayashi

    Published 2022-01-01
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  13. 13
    Effectiveness of <italic>c</italic>-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM

    Effectiveness of <italic>c</italic>-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM by Naomi Yazaki, Ryosuke Motoyoshi, Shiyu Numata, Kazuaki Ohshima, Yuji Egi, Fumito Isaka, Toshikazu Ohno, Sachiaki Tezuka, Toshiki Hamada, Kazuma Furutani, Kazuki Tsuda, Takanori Matsuzaki, Tatsuya Onuki, Tsutomu Murakawa, Hitoshi Kunitake, Masaharu Kobayashi, Shunpei Yamazaki

    Published 2023-01-01
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  14. 14
    Development of multiple AI pipelines that predict neoadjuvant chemotherapy response of breast cancer using H&E‐stained tissues

    Development of multiple AI pipelines that predict neoadjuvant chemotherapy response of breast cancer using H&E‐stained tissues by Bin Shen, Akira Saito, Ai Ueda, Koji Fujita, Yui Nagamatsu, Mikihiro Hashimoto, Masaharu Kobayashi, Aashiq H Mirza, Hans Peter Graf, Eric Cosatto, Shoichi Hazama, Hiroaki Nagano, Eiichi Sato, Jun Matsubayashi, Toshitaka Nagao, Esther Cheng, Syed AF Hoda, Takashi Ishikawa, Masahiko Kuroda

    Published 2023-05-01
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