Showing 1 - 20 results of 71 for search 'Massachusetts Institute of Technology. Microsystems Technology Laboratories.', query time: 0.03s Refine Results
  1. 1

    Analysis, design, and implementation of charge-to-digital converters by Paul, Susanne A. (Susanne Anita)

    Published 2005
    Other Authors: “…Massachusetts Institute of Technology. Microsystems Technology Laboratories.…”
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    Thesis
  2. 2

    Energy flow: image correspondence approximation for motion analysis by Wang, Liangliang, Li, Ruifeng, Fang, Yajun

    Published 2016
    Other Authors: “…Massachusetts Institute of Technology. Microsystems Technology Laboratories…”
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    Article
  3. 3
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    Evaluation and Reliability Assessment of GaN-on-Si MIS-HEMT for Power Switching Applications by Chou, Po-Chien, Chen, Szu-Hao, Hsieh, Ting-En, Cheng, Stone, Chang, Edward, del Alamo, Jesus A

    Published 2017
    Other Authors: “…Massachusetts Institute of Technology. Microsystems Technology Laboratories…”
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    Article
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    Materials and processing issues in vertical GaN power electronics by Hu, Jie, Zhang, Yuhao, Sun, Min, Piedra, Daniel, Chowdhury, Nadim, Palacios, Tomas

    Published 2019
    Other Authors: “…Massachusetts Institute of Technology. Microsystems Technology Laboratories…”
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    Article
  9. 9

    EMG-based Real Time Facial Gesture Recognition for Stress Monitoring by Orguc, Sirma, Khurana, Harneet Singh, Stankovic, Konstantina M., Leel, H.S., Chandrakasan, Anantha P

    Published 2020
    Other Authors: “…Massachusetts Institute of Technology. Microsystems Technology Laboratories…”
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    Article
  10. 10

    Ultrathin ceramic piezoelectric films via room-temperature electrospray deposition of ZnO nanoparticles for printed GHz devices by García-Farrera, Brenda, Velásquez-García, Luis F.

    Published 2020
    Other Authors: “…Massachusetts Institute of Technology. Microsystems Technology Laboratories…”
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    Article
  11. 11

    Powder filling and sintering of 3D in-chip solenoid coils with high aspect ratio structure by Huang, Yujia, Li, Haiwang, Sun, Jiamian, Zhai, Yanxin, Li, Hanqing, Xu, Tiantong

    Published 2020
    Other Authors: “…Massachusetts Institute of Technology. Microsystems Technology Laboratories…”
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    Article
  12. 12

    Nanoscale silicon field emitter arrays with self-aligned extractor and focus gates by Rughoobur, Girish, Karaulac, Nedeljko, Jain, Lay, Omotunde, Olutimilehin O, Akinwande, Akintunde I

    Published 2020
    Other Authors: “…Massachusetts Institute of Technology. Microsystems Technology Laboratories…”
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    Article
  13. 13

    Nanofabricated Low-Voltage Gated Si Field-Ionization Arrays by Rughoobur, Girish, Sahagun, Alvaro, Ilori, Olusoji O., Akinwande, Akintunde I

    Published 2020
    Other Authors: “…Massachusetts Institute of Technology. Microsystems Technology Laboratories…”
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    Article
  14. 14

    Gate current degradation in W-band InAlN/AlN/GaN HEMTs under gate stress by Wu, Yufei, del Alamo, Jesus A

    Published 2020
    Other Authors: “…Massachusetts Institute of Technology. Microsystems Technology Laboratories…”
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    Article
  15. 15

    A Diamond:H/WO3 Metal–Oxide–Semiconductor Field-Effect Transistor by Yin, Zongyou, Tordjman, Moshe, Vardi, Alon, Kalish, Rafi, del Alamo, Jesus A

    Published 2020
    Other Authors: “…Massachusetts Institute of Technology. Microsystems Technology Laboratories…”
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    Article
  16. 16

    Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature by Warnock, Shireen M., Lemus, Allison, Joh, Jungwoo, Krishnan, Srikanth, Pendharkar, Sameer, del Alamo, Jesus A

    Published 2020
    Other Authors: “…Massachusetts Institute of Technology. Microsystems Technology Laboratories…”
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    Article
  17. 17

    Anomalous Source-Side Degradation of InAlN/GaN HEMTs Under High-Power Electrical Stress by Wu, Yufei, Sasangka, Wardhana A., del Alamo, Jesus A

    Published 2020
    Other Authors: “…Massachusetts Institute of Technology. Microsystems Technology Laboratories…”
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    Article
  18. 18

    Alcohol-Based Digital Etch for III–V Vertical Nanowires With Sub-10 nm Diameter by Lu, Wenjie, Zhao, Xin, Choi, Dongsung, El Kazzi, Salim, del Alamo, Jesus A

    Published 2020
    Other Authors: “…Massachusetts Institute of Technology. Microsystems Technology Laboratories…”
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    Article
  19. 19

    Self-aligned InGaAs FinFETs with 5-nm fin-width and 5-nm gate-contact separation by Vardi, Alon, Kong, Lisa (Lisa Fanzhen), Lu, Wenjie, Cai, Xiaowei, Zhao, Xin, Grajal de la Fuente, Jesus, del Alamo, Jesus A

    Published 2020
    Other Authors: “…Massachusetts Institute of Technology. Microsystems Technology Laboratories…”
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    Article
  20. 20

    10-nm Fin-width InGaSb p-channel self-aligned FinFETs using antimonide-compatible digital etch by Lu, Wenjie, Roh, I. P., Geum, D.-M., Kim, S.-H., Song, J. D., Kong, L., del Alamo, Jesus A

    Published 2020
    Other Authors: “…Massachusetts Institute of Technology. Microsystems Technology Laboratories…”
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    Article