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Matthias Moser
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PECVD SiNx passivation with more than 8 MV/cm breakdown strength for GaN-on-Si wafer stress management
by
Matthias Moser
,
Mamta Pradhan
,
Mohammed Alomari
,
Michael Heuken
,
Thomas Schmitt
,
Ingmar Kallfass
,
Joachim N. Burghartz
Published 2023-03-01
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