3 kV monolithic bidirectional GaN HEMT on sapphire por Md Tahmidul Alam, Swarnav Mukhopadhyay, Md Mobinul Haque, Shubhra S. Pasayat, Chirag Gupta

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2 kV Al0.64Ga0.36N-channel high electron mobility transistors with passivation and field plates por Md Tahmidul Alam, Jiahao Chen, Kenneth Stephenson, Md Abdullah-Al Mamun, Abdullah Al Mamun Mazumder, Shubhra S. Pasayat, Asif Khan, Chirag Gupta

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