Special Issue “Advances in Epitaxial Materials”-Editorial Preface by Mike Leszczynski

Get full text

Numerical Analysis of the High Pressure MOVPE Upside-Down Reactor for GaN Growth by Przemyslaw Niedzielski, Ewa Raj, Zbigniew Lisik, Jerzy Plesiewicz, Ewa Grzanka, Robert Czernecki, Mike Leszczynski

Get full text

The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs by Mikolaj Grabowski, Ewa Grzanka, Szymon Grzanka, Artur Lachowski, Julita Smalc-Koziorowska, Robert Czernecki, Roman Hrytsak, Joanna Moneta, Grzegorz Gawlik, Andrzej Turos, Mike Leszczyński

Get full text

Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition by Emanuela Schilirò, Filippo Giannazzo, Salvatore Di Franco, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Paweł Prystawko, Piotr Kruszewski, Mike Leszczynski, Ildiko Cora, Béla Pécz, Zsolt Fogarassy, Raffaella Lo Nigro

Get full text

GaN Laser Diode Technology for Visible-Light Communications by Stephen P. Najda, Piotr Perlin, Tadek Suski, Lucja Marona, Mike Leszczyński, Przemek Wisniewski, Szymon Stanczyk, Dario Schiavon, Thomas Slight, Malcolm A. Watson, Steffan Gwyn, Anthony E. Kelly, Scott Watson

Get full text