Critical parameters for the presence of a 2DEG in GaN/AlxGa1−xN heterostructures by T. Scheinert, T. Mikolajick, S. Schmult

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Focus issue on hafnium oxide based neuromorphic devices by Stefan Slesazeck, Thomas Mikolajick

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Progress and future prospects of negative capacitance electronics: A materials perspective by Michael Hoffmann, Stefan Slesazeck, Thomas Mikolajick

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Investigating charge trapping in ferroelectric thin films through transient measurements by Suzanne Lancaster, Patrick D. Lomenzo, Moritz Engl, Bohan Xu, Thomas Mikolajick, Thomas Mikolajick, Uwe Schroeder, Stefan Slesazeck

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Modulation of Oxygen Content and Ferroelectricity in Sputtered Hafnia‐Zirconia by Engineering of Tungsten Oxide Bottom Electrodes by Xuetao Wang, Stefan Slesazeck, Thomas Mikolajick, Matthias Grube

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Direct Correlation of Ferroelectric Properties and Memory Characteristics in Ferroelectric Tunnel Junctions by Benjamin Max, Michael Hoffmann, Stefan Slesazeck, Thomas Mikolajick

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Materials for information technology : devices, interconnects and packaging / by Euromat 2003 (2003 : Lausanne, Switzerland), Whelan, Caroline, Mikolajick, Thomas, Zschech, Ehrenfried

Emerging reconfigurable electronic devices based on two‐dimensional materials: A review by Wenwen Fei, Jens Trommer, Max Christian Lemme, Thomas Mikolajick, André Heinzig

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Insights Into Curie‐Temperature and Phase Formation of Ferroelectric Hf1−xZrxO2 with Oxygen Defects from a Leveled Energy Landscape by Luis Azevedo Antunes, Richard Ganser, Uwe Schroeder, Thomas Mikolajick, Alfred Kersch

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Inherent Charge-Sharing-Free Dynamic Logic Gates Employing Transistors With Multiple Independent Inputs by Jens Trommer, Maik Simon, Stefan Slesazeck, Walter M. Weber, Thomas Mikolajick

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Graph Coloring via Locally-Active Memristor Oscillatory Networks by Alon Ascoli, Martin Weiher, Melanie Herzig, Stefan Slesazeck, Thomas Mikolajick, Ronald Tetzlaff

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Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN by Felix Schubert, Steffen Wirth, Friederike Zimmermann, Johannes Heitmann, Thomas Mikolajick, Stefan Schmult

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2D BDiode – A switchable bidirectional diode for analog electronic circuits fabricated entirely from 2D materials by Christian D. Matthus, Phanish Chava, Kenji Watanabe, Takashi Taniguchi, Thomas Mikolajick, Artur Erbe

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A FeFET-Based Hybrid Memory Accessible by Content and by Address by Cedric Marchand, Ian O'Connor, Mayeul Cantan, Evelyn T. Breyer, Stefan Slesazeck, Thomas Mikolajick

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Kinetics of N‐ to M‐Polar Switching in Ferroelectric Al1−xScxN Capacitors by Roberto Guido, Haidong Lu, Patrick D. Lomenzo, Thomas Mikolajick, Alexei Gruverman, Uwe Schroeder

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Electrical characterization of multi-gated WSe2/MoS2 van der Waals heterojunctions by Phanish Chava, Vaishnavi Kateel, Kenji Watanabe, Takashi Taniguchi, Manfred Helm, Thomas Mikolajick, Artur Erbe

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Reliability Improvement from La2O3 Interfaces in Hf0.5Zr0.5O2‐Based Ferroelectric Capacitors by Furqan Mehmood, Ruben Alcala, Pramoda Vishnumurthy, Bohan Xu, Ridham Sachdeva, Thomas Mikolajick, Uwe Schroeder

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<italic>I-V-T</italic> Characteristics and Temperature Sensor Performance of a Fully 2-D WSe₂/MoS₂ Heterojunction Diode at Cryogenic Temperatures by Christian D. Matthus, Phanish Chava, Kenji Watanabe, Takashi Taniguchi, Thomas Mikolajick, Manfred Helm, Artur Erbe

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Dry release of MEMS origami using thin Al2O3 films for facet-based device integration by J. Zhang, J. Reif, C. Strobel, P. Chava, A. Erbe, A. Voigt, T. Mikolajick, R. Kirchner

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Modulation Doping of Silicon Nanowires to Tune the Contact Properties of Nano‐Scale Schottky Barriers by Soundarya Nagarajan, Daniel Hiller, Ingmar Ratschinski, Dirk König, Sean C. Smith, Thomas Mikolajick, Jens Trommer

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