Current Understanding of Bias-Temperature Instabilities in GaN MIS Transistors for Power Switching Applications by Milan Ťapajna

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Application of Open Circuit Voltage Decay to the Characterization of p/n+ and n/p+ Epitaxial Layer by Milan Tapajna, Jaroslav Pjencak, Andrej Vrbicky, Pavol Kudela, Ladislav Harmatha

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Characterization of Unipolar Power Devices Technology by Ladislav Harmatha, Milan Tapajna, Pavol Pisecny, Lubica Stuchlikova, Daniel Donoval

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Properties of the Si-SiO2 Interfaces in MOS Structures with Nitrogen Doped Silicon by Ladislav Harmatha, Peter Ballo, Juraj Breza, Pavol Pisecny, Milan Tapajna

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Characterization of High Energy Irradiated MOS Structures Using the Capacitance Methods by Pavol Pisecny, Lubica Stuchlikova, Ladislav Harmatha, Milan Tapajna, Otto Csabay

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Structure and Thermal Stability of ε/κ-Ga₂O₃ Films Deposited by Liquid-Injection MOCVD by Edmund Dobročka, Filip Gucmann, Kristína Hušeková, Peter Nádaždy, Fedor Hrubišák, Fridrich Egyenes, Alica Rosová, Miroslav Mikolášek, Milan Ťapajna

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