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    Study on the damage evolution of 6H-SiC under different phosphorus ion implantation conditions and annealing temperatures

    Study on the damage evolution of 6H-SiC under different phosphorus ion implantation conditions and annealing temperatures by Jin-Jun Gu, Jin-Hua Zhao, Ming-Yang Bu, Su-Mei Wang, Li Fan, Qing Huang, Shuang Li, Qing-Yang Yue, Xue-Lin Wang, Zhi-Xian Wei, Yong Liu

    Published 2022-12-01
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