High drain field impact ionization transistors as ideal switches by Baowei Yuan, Zhibo Chen, Yingxin Chen, Chengjie Tang, Weiao Chen, Zengguang Cheng, Chunsong Zhao, Zhaozhao Hou, Qiang Zhang, Weizhuo Gan, Jiacheng Gao, Jiale Wang, Jeffrey Xu, Guangxi Hu, Zhenhua Wu, Kun Luo, Mingyan Luo, Yuanbo Zhang, Zengxing Zhang, Shisheng Xiong, Chunxiao Cong, Wenzhong Bao, Shunli Ma, Jing Wan, Peng Zhou, Ye Lu

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