Influence of Carbon Cap on Self-Diffusion in Silicon Carbide by Marianne Etzelmüller Bathen, Margareta Linnarsson, Misagh Ghezellou, Jawad Ul Hassan, Lasse Vines

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The role of boron related defects in limiting charge carrier lifetime in 4H–SiC epitaxial layers by Misagh Ghezellou, Piyush Kumar, Marianne E. Bathen, Robert Karsthof, Einar Ö. Sveinbjörnsson, Ulrike Grossner, J. Peder Bergman, Lasse Vines, Jawad Ul-Hassan

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Two-Emitter Multimode Cavity Quantum Electrodynamics in Thin-Film Silicon Carbide Photonics by Daniil M. Lukin, Melissa A. Guidry, Joshua Yang, Misagh Ghezellou, Sattwik Deb Mishra, Hiroshi Abe, Takeshi Ohshima, Jawad Ul-Hassan, Jelena Vučković

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Spectral stability of V2 centres in sub-micron 4H-SiC membranes by Jonah Heiler, Jonathan Körber, Erik Hesselmeier, Pierre Kuna, Rainer Stöhr, Philipp Fuchs, Misagh Ghezellou, Jawad Ul-Hassan, Wolfgang Knolle, Christoph Becher, Florian Kaiser, Jörg Wrachtrup

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Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide by Pasquale Cilibrizzi, Muhammad Junaid Arshad, Benedikt Tissot, Nguyen Tien Son, Ivan G. Ivanov, Thomas Astner, Philipp Koller, Misagh Ghezellou, Jawad Ul-Hassan, Daniel White, Christiaan Bekker, Guido Burkard, Michael Trupke, Cristian Bonato

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Epitaxial growth of β-Ga2O3 by hot-wall MOCVD by Daniela Gogova, Misagh Ghezellou, Dat Q. Tran, Steffen Richter, Alexis Papamichail, Jawad ul Hassan, Axel R. Persson, Per O. Å. Persson, Olof Kordina, Bo Monemar, Matthew Hilfiker, Mathias Schubert, Plamen P. Paskov, Vanya Darakchieva

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