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    Defect-insensitive current–voltage characteristics of Schottky barrier diode formed on heteroepitaxial α-Ga2O3 grown by mist chemical vapor deposition

    Defect-insensitive current–voltage characteristics of Schottky barrier diode formed on heteroepitaxial α-Ga2O3 grown by mist chemical vapor deposition by Takuya Maeda, Mitsuru Okigawa, Yuji Kato, Isao Takahashi, Takashi Shinohe

    Published 2020-12-01
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