CALCULATION OF STATIC PARAMETERS OF SILICON DIODE CONTAINING δ-LAYER OF TRIPLE-CHARGED POINT DEFECTS IN SYMMETRIC p–n-JUNCTION by N. A. Poklonski, A. I. Kovalev, N. I. Gorbachuk, S. V. Shpakovski

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Effect of Hole Extraction from the Base Region of a Silicon <i>p–n–p</i> Transistor on its Reactive Impedance by N. I. Gorbachuk, N. A. Poklonski, Ya. N. Marochkina, S. V. Shpakovski

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Controlling of Differential Resistance of <i>p–n</i>-Junctions of Bipolar Transistor in Active Mode by Method of Impedance Spectroscopy by N. I. Gorbachuk, N. A. Poklonski, Ya. N. Marochkina, S. V. Shpakovski

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IMPEDANCE SPECTROSCOPY OF POLYCRYSTALLINE TIN DIOXIDE FILMS by D. V. Adamchuck, V. K. Ksenevich, N. I. Gorbachuk, V. I. Shimanskij

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Design of Peltier Element Based on Semiconductors with Hopping Electron Transfer via Defects by N. A. Poklonski, S. A. Vyrko, A. I. Kovalev, I. I. Anikeev, N. I. Gorbachuk

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TECHNIQUE OF ESTIMATE OF CONDUCTIVITY OF SMALL COAL SAMPLES BY THEIR INFLUENCE ON SIGNAL OF SPIN-LABEL IN RESONATOR OF ESR SPECTROMETER by N. A. Poklonski, S. A. Vyrko, O. N. Poklonskaya, N. I. Gorbachuk, A. I. Siahlo

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Formation of radiation-disturbed layer in Al/SiO2/n-Si structures irradiated with helium ions with energy 5 MeV by V. Q. Nha, L. V. Thang, H. T. Thuy Linh, N. I. Gorbachuk, N. X. Cuong

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