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Spatially correlated structural and optical characterization of a single InGaAs quantum well fin selectively grown on Si by microscopy and cathodoluminescence techniques by S. David, J. Roque, N. Rochat, N. Bernier, L. Piot, R. Alcotte, T. Cerba, M. Martin, J. Moeyaert, Y. Bogumilowizc, S. Arnaud, F. Bertin, F. Bassani, T. Baron
Published 2016-05-01
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