The recombination mechanism of Mg-doped GaN nanorods grown by plasma-assisted molecular-beam epitaxy by Park, Y, Na, J, Taylor, R, Park, C, Lee, K, Kang, T

Characterization of tunneling and free-carrier screening in coupled asymmetric GaN/AlGaN quantum discs by Lee, K, Na, J, Birner, S, Yi, SN, Taylor, R, Park, Y, Park, C, Kang, T

Properties of selective-area-growth GaN grown on various buffered Si(111) substrates by HVPE by Shin, D, Bae, M, Yi, SN, Na, J, Lee, K, Taylor, R, Doh, S, Park, S

Roughness analysis of GaN surfaces at different annealing temperatures for an AlN buffer layer by Bae, M, Shin, D, Yi, SN, Doh, S, Na, J, Lee, K, Taylor, R, Park, S

Free carrier screening in coupled asymmetric GaN quantum discs by Lee, K, Na, J, Birner, S, Taylor, R, Yi, SN, Park, Y, Park, C, Kang, T

Two-photon excitation of asymmetric GaN/AlGaN quantum discs by Lee, K, Na, J, Birner, S, Yi, SN, Taylor, R, Park, Y, Park, C, Kang, T

Two-photon excitation spectroscopy of coupled asymmetric GaN/AlGaN quantum discs by Lee, K, Birner, S, Na, J, Taylor, R, Yi, SN, Park, Y, Park, C, Kang, T

Enhancement of free-carrier screening due to tunneling in coupled asymmetric GaN/AlGaN quantum discs by Lee, K, Na, J, Taylor, R, Yi, SN, Birner, S, Park, Y, Park, C, Kang, T

Two-dimensional exciton behavior in GaN nanocolumns grown by molecular-beam epitaxy by Na, J, Taylor, R, Rice, J, Robinson, J, Lee, K, Park, Y, Park, C, Kang, T

Surface investigation of a cubic AIN buffer layer and GaN grown on Si (111) and si (100) as revealed by atomic force microscopy by Bae, M, Shin, D, Yi, SN, Na, J, Green, A, Taylor, R, Park, S, Kang, N

Time-resolved and time-integrated photoluminescence studies of coupled asymmetric GaN quantum discs embedded in AlGaN barriers by Na, J, Taylor, R, Rice, J, Robinson, J, Lee, K, Park, Y, Park, C, Kang, T

Two-dimensional exciton behavior in GaN nanocolumns grown by molecular-beam epitaxy by Na, J, Taylor, R, Rice, J, Robinson, J, Lee, K, Park, Y, Park, C, Kang, T

Quantum dot emission from selectively-grown InGaN/GaN micropyramid arrays by Taylor, R, Rice, J, Na, J, Robinson, J, Martin, R, Edwards, P, Watson, I, Liu, C

Simulation of the quantum-confined stark effect in a single InGaN quantum dot by Lee, K, Robinson, J, Rice, J, Na, J, Taylor, R, Oliver, R, Kappers, M, Humphreys, C

The structural properties of GaN grown on Si substrates by using various annealing conditions for the AlN buffer layers by Shin, D, Bae, M, Yi, SN, Na, J, Green, A, Taylor, R, Cho, Y, Cho, H, Park, S

Luminescence properties of isolated InGaN/GaN quantum dots by Martin, R, Edwards, P, Taylor, R, Rice, J, Na, J, Robinson, J, Smith, J, Liu, C, Watson, I

Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness by Na, J, Taylor, R, Lee, K, Wang, T, Tahraoui, A, Fox, A, Yi, S, Park, Y, Choi, J, Lee, J

Quantum dot emission from site-controlled InGaN/GaN micropyramid arrays by Edwards, P, Martin, R, Watson, I, Liu, C, Taylor, R, Rice, J, Na, J, Robinson, J, Smith, J

SPRTN protease-cleaved MRE11 decreases DNA repair and radiosensitises cancer cells by Na, J, Newman, J, Then, CK, Syed, J, Vendrell, I, Torrecilla, I, Ellermann, S, Ramadan, K, Fischer, R, Kiltie, A

Biexciton and exciton dynamics in single InGaN quantum dots by Rice, J, Robinson, J, Na, J, Lee, K, Taylor, R, Williams, D, O'Reilly, E, Andreev, A, Arakawa, Y, Yasin, S