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    Investigation of Static Performances of 1.2kV 4H-SiC MOSFETs Fabricated Using All ‘Room Temperature’ Ion Implantations

    Investigation of Static Performances of 1.2kV 4H-SiC MOSFETs Fabricated Using All ‘Room Temperature’ Ion Implantations by Stephen A. Mancini, Seung Yup Jang, Zeyu Chen, Dongyoung Kim, Alex Bialy, Balaji Raghotamacher, Michael Dudley, Nadeemullah Mahadik, Robert Stahlbush, Mowafak Al-Jassim, Woongje Sung

    Published 2024-01-01
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