Strain-engineered group IV light sources for photonic-integrated circuits by Nam, Donguk

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Low-threshold germanium laser for chip-scale LiDAR by Nam, Donguk

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Negative thermal Hall conductance in a two-dimer Shastry-Sutherland model with a π-flux Dirac triplon by Sun, Hao, Sengupta, Pinaki, Nam, Donguk, Yang, Bo

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Second-harmonic generation in germanium-on-insulator from visible to telecom wavelengths by Wang, Yadong, Burt, Daniel, Lu, Kunze, Nam, Donguk

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Room temperature lasing unraveled by a strong resonance between gain and parasitic absorption in uniaxially strained germanium by Gupta, Shashank, Nam, Donguk, Vuckovic, Jelena, Saraswat, Krishna

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Strained germanium nanowire optoelectronic devices for photonic-integrated circuits by Qi, Zhipeng, Sun, Hao, Luo, Manlin, Jung, Yongduck, Nam, Donguk

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Frequency-tunable terahertz graphene laser enabled by pseudomagnetic fields in strain-engineered graphene by Sun, Hao, Qi, Zhipeng, Kim, Youngmin, Luo, Manlin, Yang, Bo, Nam, Donguk

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Ultrafast light emission at telecom wavelengths from a wafer-scale monolayer graphene enabled by Fabry-Perot interferences by Lu, Kunze, Luo, Manlin, Wang, Yadong, Son, Bongkwon, Yu, Yi, Nam, Donguk

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Band structure and optical properties of uniaxial tensile strained Ge and Ge quantum well by Fan, Weijun, Tan, Chuan Seng, Wang, Qi Jie, Nam, Donguk, Zhang, Dao Hua

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Systematic study on photoexcited carrier dynamics related to defects in GeSn Films with low Sn content at room temperature by Son, Bongkwon, Zhang, Lin, Jung, Yongduck, Zhou, Hao, Nam, Donguk, Tan, Chuan Seng

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Strong second-harmonic generation by sublattice polarization in non-uniformly strained monolayer graphene by Lu, Kunze, Luo, Manlin, Gao, Weibo, Wang, Qi Jie, Sun, Hao, Nam, Donguk

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Heterostrain-enabled dynamically tunable moiré superlattice in twisted bilayer graphene by Gao, Xuejiao, Sun, Hao, Kang, Dong-Ho, Wang, Chongwu, Wang, Qi Jie, Nam, Donguk

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Extended-SWIR GeSn LEDs with reduced footprint and efficient operation power by Atalla, Mahmoud R. M., Kim, Youngmin, Assali, Simone, Burt, Daniel, Nam, Donguk, Moutanabbir, Oussama

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Resonant nanostructures for highly confined and ultra-sensitive surface phonon-polaritons by Dubrovkin, Alexander M., Qiang, Bo, Salim, Teddy, Nam, Donguk, Zheludev, Nikolay I., Wang, Qi Jie

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Oxide thin-film transistor-based vertically stacked complementary inverter for logic and photo-sensor operations by Joo, Hyo-Jun, Shin, Min-Gyu, Jung, Hwan-Seok, Cha, Hyun-Seok, Nam, Donguk, Kwon, Hyuck-In

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Band structure of strained Ge 1− x Sn x alloy : a full-zone 30-band k · p model by Song, Zhigang, Fan, Weijun, Tan, Chuan Seng, Wang, Qijie, Nam, Donguk, Zhang, Dao Hua, Sun, Greg

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Band structure of Ge 1− x Sn x alloy : a full-zone 30-band k · p model by Song, Zhigang, Fan, Weijun, Tan, Chuan Seng, Wang, Qijie, Nam, Donguk, Zhang, Dao Hua, Sun, Greg

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GeSn-on-insulator dual-waveband resonant-cavity-enhanced photodetectors at the 2 μm and 155 μm optical communication bands by Chen, Qimiao, Wu, Shaoteng, Zhang, Lin, Burt, Daniel, Zhou, Hao, Nam, Donguk, Fan, Weijun, Tan, Chuan Seng

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Rapid fabrication of complex nanostructures using room-temperature ultrasonic nanoimprinting by Ge, Junyu, Ding, Bin, Hou, Shuai, Luo, Manlin, Nam, Donguk, Duan, Hongwei, Gao, Huajian, Lam, Yee Cheong, Li, Hong

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Enhanced GeSn microdisk lasers directly released on Si by Kim, Youngmin, Assali, Simone, Burt, Daniel, Jung, Yongduck, Joo, Hyo-Jun, Chen, Melvina, Ikonic, Zoran, Moutanabbir, Oussama, Nam, Donguk

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