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A Stacked Back Side-Illuminated Voltage Domain Global Shutter CMOS Image Sensor with a 4.0 μm Multiple Gain Readout Pixel by Ken Miyauchi, Kazuya Mori, Toshinori Otaka, Toshiyuki Isozaki, Naoto Yasuda, Alex Tsai, Yusuke Sawai, Hideki Owada, Isao Takayanagi, Junichi Nakamura
Published 2020-01-01
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An Over 90 dB Intra-Scene Single-Exposure Dynamic Range CMOS Image Sensor Using a 3.0 μm Triple-Gain Pixel Fabricated in a Standard BSI Process by Isao Takayanagi, Norio Yoshimura, Kazuya Mori, Shinichiro Matsuo, Shunsuke Tanaka, Hirofumi Abe, Naoto Yasuda, Kenichiro Ishikawa, Shunsuke Okura, Shinji Ohsawa, Toshinori Otaka
Published 2018-01-01
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