Effective suppression of current collapse in both E- and D-mode AlGaN/GaN HEMTs on Si by [(NH4)2Sx] passivation by Vicknesh, Sahmuganathan, Arulkumaran, Subramaniam, Ng, Geok Ing

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Investigation of self-heating effect on DC and RF performances in AlGaN/GaN HEMTs on CVD-Diamond by Ranjan, Kumud, Arulkumaran, S., Ng, Geok Ing, Sandupatla, A.

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Monolithic integration of heterojunction bipolar transistors and high electron mobility transistors by Radhakrishnan, K., Ng, Geok Ing., Yoon, Soon Fatt.

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Temperature Dependent Characteristics of InAlN/GaN HEMTs for mm-Wave Applications by Xing, Weichuan, Liu, Zhihong, Ng, Geok Ing, Palacios, Tomas

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Role of ex-situ HfO2 passivation to improve device performance and suppress X-ray-induced degradation characteristics of in-situ Si3N4/AlN/GaN MIS-HEMTs by Dalapati, Pradip, Li, Hanchao, Arulkumaran, Subramaniam, Ng, Geok Ing

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Strategic research on RF and microwave by Ng, Geok Ing, Lau, Wai Shing, Law, Choi Look

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Temperature dependent characteristics of InAlN/GaN HEMTs for mm-wave applications by Xing, Weichuan, Liu, Zhihong, Ng, Geok Ing, Palacios, Tomas

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High Johnson’s figure of merit (8.32 THz·V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon by Ranjan, Kumud, Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan

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Compact true time delay line with partially shielded coplanar waveguide transmission lines by Lim, Hong Yi, Ng, Geok Ing, Leong, Yoke Choy

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Demonstration of AlGaN/GaN MISHEMT on Si with low-temperature epitaxy grown AlN dielectric gate by Whiteside, Matthew, Arulkumaran, Subramaniam, Dikme, Yilmaz, Sandupatla, Abhinay, Ng, Geok Ing

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A Compact Model for Generic MIS-HEMTs Based on the Unified 2DEG Density Expression by Zhang, Junbin, Syamal, Binit, Zhou, Xing, Arulkumaran, Subramaniam, Ng, Geok Ing

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A modular approach to design a full three-way 8 to 18 GHz MMIC active circulator by Lim, Hong Yi, Ng, Geok Ing, Ang, Kian Sen, Leong, Yoke Choy

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InAlN/GaN HEMTs on Si With High fT of 250 GHz by Xing, Weichuan, Liu, Zhihong, Qiu, Haodong, Ranjan, Kumud, Gao, Yu, Ng, Geok Ing, Palacios, Tomás

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A hybrid GaN HEMT model merging artificial neural networks and ASM-HEMT for parameter precision and scalability by Lu, Zhongzhiguang, Li, Hanchao, Xie, Hanlin, Zhuang, Yihao, Wang, Wensong, Ng, Geok Ing, Zheng, Yuanjin

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Characteristic temperature of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser by Li, Xiang, Wang, Hong, Qiao, Zhongliang, Guo, Xin, Wang, Wanjun, Ng, Geok Ing, Liu, Chongyang

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Temperature- and current-dependent repetition frequency of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser by Li, Xiang, Wang, Hong, Qiao, Zhongliang, Guo, Xin, Wang, Wanjun, Ng, Geok Ing, Liu, Chongyang

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GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates by Deki, M., Nitta, S., Honda, Y., Amano, H., Sandupatla, Abhinay, Arulkumaran, Subramanian, Ng, Geok Ing, Ranjan, Kumud

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High-responsivity modulation-doped AlGaAs/InGaAs thermopiles for uncooled IR-FPA utilizing integrated HEMT-MEMS technology by Abe, Masayuki, Abe, Yuki, Kogushi, Noriaki, Ang, Kian Siong, Hofstetter, René, Wang, Hong, Ng, Geok Ing

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Band alignment between GaN and ZrO2 formed by atomic layer deposition by Ye, Gang, Wang, Hong, Arulkumaran, Subramaniam, Ng, Geok Ing, Li, Yang, Liu, Zhi Hong, Ang, Kian Siong

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Enhancing the piezoelectric modulus of wurtzite AlN by ion beam strain engineering by Fiedler, Holger, Leveneur, Jérôme, Mitchell, David R. G., Arulkumaran, Subramaniam, Ng, Geok Ing, Alphones, Arokiaswami, Kennedy, John

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