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  1. 1
    Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3

    Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3 by Fikadu Alema, Yuewei Zhang, Andrei Osinsky, Nicholas Valente, Akhil Mauze, Takeki Itoh, James S. Speck

    Published 2019-12-01
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  2. 2
    Low 1014  cm−3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD

    Low 1014  cm−3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD by Fikadu Alema, Yuewei Zhang, Andrei Osinsky, Nazar Orishchin, Nicholas Valente, Akhil Mauze, James S. Speck

    Published 2020-02-01
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