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  1. 1
    Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

    Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate by Matteo Meneghini, Oliver Hilt, Joachim Wuerfl, Gaudenzio Meneghesso

    Published 2017-01-01
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    Article
  2. 2
    On the Conduction Properties of Vertical GaN n-Channel Trench MISFETs

    On the Conduction Properties of Vertical GaN n-Channel Trench MISFETs by Eldad Bahat Treidel, Oliver Hilt, Veit Hoffmann, Frank Brunner, Nicole Bickel, Andreas Thies, Kornelius Tetzner, Hassan Gargouri, Christian Huber, Konstanty Donimirski, Joachim Wurfl

    Published 2021-01-01
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    Article

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